Nonlinear Inertial Diode Model Considering the Dependence of Nonequilibrium Charge Carrier Lifetime on Direct Current to Improve Simulation of Radioelectronic Equipment
Introduction. Adequate modeling of semiconductor devices with a p–n-junction in reverse bias represents a relevant research problem. The existing quasistatic and non-quasistatic models fail to provide a satisfactory description for the dependence of nonequilibrium charge carrier lifetime on current...
| Main Authors: | , |
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| Format: | Article |
| Language: | Russian |
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Saint Petersburg Electrotechnical University "LETI"
2022-12-01
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| Series: | Известия высших учебных заведений России: Радиоэлектроника |
| Subjects: | |
| Online Access: | https://re.eltech.ru/jour/article/view/696 |