Ab Initio Study on Dopant Relaxation Mechanism in Ti and Ce Cationically Substituted in Wurtzite Gallium Nitride
The changes in properties of materials upon introduction of impurities is well documented but less is known about the location of foreign atoms in different hosts. This study is carried out with the motivation to explore dopant location in hexagonal GaN using density functional theory based calculat...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-05-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/15/10/3599 |