A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices

A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices

This study employs an innovative dynamic switching test system to investigate the dynamic switching characteristics of three p-GaN HEMT devices. The dynamic switching characteristics are different from the previous research on the dynamic resistance characteristics of GaN devices, and the stability...

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Bibliographic Details
Main Authors: Chen Fan, Haitao Zhang, Huipeng Liu, Xiaofei Pan, Su Yan, Hongliang Chen, Wei Guo, Lin Cai, Shuhua Wei
Format: Article
Language:English
Published: MDPI AG 2024-07-01
Series:Micromachines
Subjects:
p-GaN HEMT
dynamic switching
capacitance
trap
Online Access:https://www.mdpi.com/2072-666X/15/8/993

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https://www.mdpi.com/2072-666X/15/8/993

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