Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET

Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET

The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of temperatures (25–125 °C). A similar temperature dependen...

Полное описание

Библиографические подробности
Главные авторы: Soohyun Kim, Jungchun Kim, Doyoung Jang, Romain Ritzenthaler, Bertrand Parvais, Jerome Mitard, Hans Mertens, Thomas Chiarella, Naoto Horiguchi, Jae Woo Lee
Формат: Статья
Язык:English
Опубликовано: MDPI AG 2020-04-01
Серии:Applied Sciences
Предметы:
GAA NW-FET
FinFET
temperature dependence
effective mobility
surface roughness scattering
Online-ссылка:https://www.mdpi.com/2076-3417/10/8/2979

Internet

https://www.mdpi.com/2076-3417/10/8/2979

Схожие документы