Designing a Sub-20V Breakdown Voltage SPAD With Standard CMOS Technology and n/p-well Structure

Designing a Sub-20V Breakdown Voltage SPAD With Standard CMOS Technology and n/p-well Structure

We have proposed a structural design for a single photon avalanche diode with a low breakdown voltage. This diode is fabricated using Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm HV CMOS technology, and it can maintain a high operating excess voltage in an n-on-p design witho...

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Bibliographic Details
Main Authors: Jau Yang Wu, Chun-Hsien Liu
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Photonics Journal
Subjects:
Single photon avalanche diode
photo detector
CMOS sensor
LiDAR
Online Access:https://ieeexplore.ieee.org/document/10419002/

Internet

https://ieeexplore.ieee.org/document/10419002/

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