Refractive Index Engineering as a New Degree of Freedom for Designing High‐Performance AlGaN‐Based Ultraviolet C Light‐Emitting Diodes

Refractive Index Engineering as a New Degree of Freedom for Designing High‐Performance AlGaN‐Based Ultraviolet C Light‐Emitting Diodes

This study delves into a profound exploration, using simple yet effective Monte Carlo ray‐tracing simulations, of the influence of the refractive indices of multiple quantum wells (MQWs) and p‐type electron blocking layer (p‐EBL) on the photon propagation and subsequent light extraction behavior in...

Full description

Bibliographic Details
Main Authors: Tongchang Zheng, Lan Yang, Changjie Zhou, Huili Zhu, Xiulin Wang, Qiubao Lin, Duanjun Cai, Junyong Kang
Format: Article
Language:English
Published: Wiley-VCH 2024-01-01
Series:Advanced Photonics Research
Subjects:
AlGaN
light-emitting diodes
transverse-electric/transverse-magnetic polarizations
ultraviolet-C
Online Access:https://doi.org/10.1002/adpr.202300248

Internet

https://doi.org/10.1002/adpr.202300248

Similar Items