Early fault detection in SiC-MOSFET with application in boost converter
This paper presents the design of a fault detection circuit applied to a silicon carbide Mosfet (SiC-Mosfet). Fault detection is done by monitoring the behavior of the gate signal. The most important characteristic that has been reported in literature is quick detection since the evaluation is done...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Universidad de Antioquia
2018-05-01
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Series: | Revista Facultad de Ingeniería Universidad de Antioquia |
Subjects: | |
Online Access: | https://revistas.udea.edu.co/index.php/ingenieria/article/view/327615 |