Early fault detection in SiC-MOSFET with application in boost converter

This paper presents the design of a fault detection circuit applied to a silicon carbide Mosfet (SiC-Mosfet). Fault detection is done by monitoring the behavior of the gate signal. The most important characteristic that has been reported in literature is quick detection since the evaluation is done...

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Bibliographic Details
Main Authors: Leobardo Hernández-González, Climaco Arvizu-Ogilvie, Alejandro Tapia-Hernández, Mario Ponce-Silva, Abraham Claudio-Sánchez, Marco Rodríguez-Blanco, Jesús Aguayo-Alquicira
Format: Article
Language:English
Published: Universidad de Antioquia 2018-05-01
Series:Revista Facultad de Ingeniería Universidad de Antioquia
Subjects:
Online Access:https://revistas.udea.edu.co/index.php/ingenieria/article/view/327615