Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric

Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric

For high-speed and large-area active-matrix displays, metal-oxide thin-film transistors (TFTs) with high field-effect mobility, stability, and good uniformity are essential. Moreover, reducing the RC delay is also important to achieve high-speed operation, which is induced by the parasitic capacitan...

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Bibliographic Details
Main Authors: Seungbeom Choi, Seungho Song, Taegyu Kim, Jae Cheol Shin, Jeong-Wan Jo, Sung Kyu Park, Yong-Hoon Kim
Format: Article
Language:English
Published: MDPI AG 2020-11-01
Series:Micromachines
Subjects:
self-aligned
top-gate
thin-film transistor
solution process
polymer gate dielectric
Online Access:https://www.mdpi.com/2072-666X/11/12/1035

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https://www.mdpi.com/2072-666X/11/12/1035

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