28-nm FD-SOI CMOS RF Figures of Merit Down to 4.2 K

28-nm FD-SOI CMOS RF Figures of Merit Down to 4.2 K

This work presents a detailed RF characterization of 28-nm FD-SOI nMOSFETs at cryogenic temperatures down to 4.2 K. Two main RF Figures of Merit (FoMs), i.e., current-gain cutoff frequency (f<sub>t</sub>) and maximum oscillation frequency (f<sub>max</sub>), as well as parasit...

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Bibliographic Details
Main Authors: Lucas Nyssens, Arka Halder, Babak Kazemi Esfeh, Nicolas Planes, Denis Flandre, Valeriya Kilchytska, Jean-Pierre Raskin
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
28-nm FD-SOI
UTBB MOSFET
cryogenic CMOS
RF figures of merit
small-signal modeling
liquid helium temperature
Online Access:https://ieeexplore.ieee.org/document/9117028/

Internet

https://ieeexplore.ieee.org/document/9117028/

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