Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors

The effect of displacement defect on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) due to radiation is investigated using technology computer-aided design (TCAD) simulation. The position, energy level, and concentration of the displacement defect are considered as variables. The t...

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Bibliographic Details
Main Authors: Gyeongyeop Lee, Jonghyeon Ha, Kihyun Kim, Hagyoul Bae, Chong-Eun Kim, Jungsik Kim
Format: Article
Language:English
Published: MDPI AG 2022-06-01
Series:Micromachines
Subjects:
displacement defect
radiation effect
SiC MOSFET
TCAD simulation
Online Access:https://www.mdpi.com/2072-666X/13/6/901

Internet

https://www.mdpi.com/2072-666X/13/6/901

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