Demonstration of p-type stack-channel ternary logic device using scalable DNTT patterning process

Demonstration of p-type stack-channel ternary logic device using scalable DNTT patterning process

Abstract A p-type ternary logic device with a stack-channel structure is demonstrated using an organic p-type semiconductor, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT). A photolithography-based patterning process is developed to fabricate scaled electronic devices with complex o...

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Bibliographic Details
Main Authors: Yongsu Lee, Heejin Kwon, Seung-Mo Kim, Ho-In Lee, Kiyung Kim, Hae-Won Lee, So-Young Kim, Hyeon Jun Hwang, Byoung Hun Lee
Format: Article
Language:English
Published: SpringerOpen 2023-03-01
Series:Nano Convergence
Subjects:
Organic semiconductor
Photolithography
Ternary logic
Stack-channel
Zero differential conductance
Online Access:https://doi.org/10.1186/s40580-023-00362-w

Internet

https://doi.org/10.1186/s40580-023-00362-w

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