Demonstration of p-type stack-channel ternary logic device using scalable DNTT patterning process
Abstract A p-type ternary logic device with a stack-channel structure is demonstrated using an organic p-type semiconductor, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT). A photolithography-based patterning process is developed to fabricate scaled electronic devices with complex o...
Main Authors: | Yongsu Lee, Heejin Kwon, Seung-Mo Kim, Ho-In Lee, Kiyung Kim, Hae-Won Lee, So-Young Kim, Hyeon Jun Hwang, Byoung Hun Lee |
---|---|
Format: | Article |
Language: | English |
Published: |
SpringerOpen
2023-03-01
|
Series: | Nano Convergence |
Subjects: | |
Online Access: | https://doi.org/10.1186/s40580-023-00362-w |
Similar Items
-
Dual-channel P-type ternary DNTT–graphene barristor
by: Yongsu Lee, et al.
Published: (2022-11-01) -
Ternary diamond-like semiconductors/
by: 265653 Berger, Lev Isaakivich, et al.
Published: (1969) -
Ternary alloys based on II-IV semiconductor compounds /
by: Tomashyk, Vasyl, et al.
Published: (2014) -
Computational lithography /
by: Ma, Xu, 1983-, et al.
Published: (c201) -
Exposure to Volatile Organic Compounds and Possibility of Exposure to By-product Volatile Organic Compounds in Photolithography Processes in Semiconductor Manufacturing Factories
by: Seung-Hyun Park, et al.
Published: (2011-09-01)