Fast Electrically Switchable Large Gap Quantum Spin Hall States in MGe2Z4

Fast Electrically Switchable Large Gap Quantum Spin Hall States in MGe2Z4

Abstract Spin‐polarized conducting edge currents counterpropagate in quantum spin Hall (QSH) insulators and are protected against disorder‐driven localizations by the time‐reversal symmetry. Using these spin‐currents for device applications requires materials with a large bandgap and fast switchable...

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Bibliographic Details
Main Authors: Rajibul Islam, Ghulam Hussain, Rahul Verma, Mohammad Sadegh Talezadehlari, Zahir Muhammad, Bahadur Singh, Carmine Autieri
Format: Article
Language:English
Published: Wiley-VCH 2023-08-01
Series:Advanced Electronic Materials
Subjects:
2D materials
DFT
quantum spin Hall insulators
topological field‐effect transistors
Online Access:https://doi.org/10.1002/aelm.202300156

Internet

https://doi.org/10.1002/aelm.202300156

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