Breakdown behavior of SiC photoconductive switch with transparent electrode
The breakdown behavior of a V-doped 4H silicon carbide photoconductive switch with a transparent electrode under a high electric field is studied. The device is triggered by a laser pulse below the bandgap wavelength with a repetition rate of 100 Hz. The light peak-power of the laser pulse reaches h...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0101435 |