High-Efficiency 200-GHz Neutralized Common-Base Power Amplifiers in 250-nm InP HBT
The analysis, design, and measurement of two Indium Phosphide (InP) heterojunction bipolar transistor (HBT) power amplifier (PA) designs are presented at G-band with record efficiency. A pseudo-differential common-base (CB) stage with neutralization capacitors and low-loss coupled-line balun (CLB) i...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
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| Series: | IEEE Journal of Microwaves |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10068341/ |