High-Efficiency 200-GHz Neutralized Common-Base Power Amplifiers in 250-nm InP HBT

High-Efficiency 200-GHz Neutralized Common-Base Power Amplifiers in 250-nm InP HBT

The analysis, design, and measurement of two Indium Phosphide (InP) heterojunction bipolar transistor (HBT) power amplifier (PA) designs are presented at G-band with record efficiency. A pseudo-differential common-base (CB) stage with neutralization capacitors and low-loss coupled-line balun (CLB) i...

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Bibliographic Details
Main Authors: Jeff Shih-Chieh Chien, Wonho Lee, James F. Buckwalter
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Journal of Microwaves
Subjects:
InP
millimeter-wave
G-band
power amplifier
Online Access:https://ieeexplore.ieee.org/document/10068341/

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