Stress redistribution in individual ultrathin strained silicon nanowires: a high-resolution polarized Raman study
Strain nano-engineering provides valuable opportunities to create high-performance nanodevices by a precise tailoring of semiconductor band structure. Achieving these enhanced capabilities has sparked a surge of interest in controlling strain on the nanoscale. In this work, the stress behavior in ul...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2013-01-01
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| Series: | New Journal of Physics |
| Online Access: | https://doi.org/10.1088/1367-2630/15/5/053042 |