Layered Indium Selenide under High Pressure: A Review

Layered Indium Selenide under High Pressure: A Review

This paper intends a short review of the research work done on the structural and electronic properties of layered Indium Selenide (InSe) and related III–VI semiconductors under high pressure conditions. The paper will mainly focus on the crucial role played by high pressure experimental a...

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Bibliographic Details
Main Author: Alfredo Segura
Format: Article
Language:English
Published: MDPI AG 2018-05-01
Series:Crystals
Subjects:
InSe
layered semiconductors
III–VI semiconductors
high pressure
optical properties
magnetoabsorption
electronic structure
lattice dynamics
dielectric properties
transport properties
Online Access:http://www.mdpi.com/2073-4352/8/5/206

Internet

http://www.mdpi.com/2073-4352/8/5/206

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