Charge pumping through a single donor atom

Charge pumping through a single donor atom

Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a single atom transistor. By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at 1 GHz are generated, even if operating at 4.2 K, with no magnetic...

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Bibliographic Details
Main Authors: G C Tettamanzi, R Wacquez, S Rogge
Format: Article
Language:English
Published: IOP Publishing 2014-01-01
Series:New Journal of Physics
Subjects:
MOSFETs
single atom transistors
charge pumping
electron sources
electrons
field effect transistors
Online Access:https://doi.org/10.1088/1367-2630/16/6/063036

Internet

https://doi.org/10.1088/1367-2630/16/6/063036

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