Charge pumping through a single donor atom
Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a single atom transistor. By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at 1 GHz are generated, even if operating at 4.2 K, with no magnetic...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2014-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/16/6/063036 |
| _version_ | 1797751440929718272 |
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| author | G C Tettamanzi R Wacquez S Rogge |
| author_facet | G C Tettamanzi R Wacquez S Rogge |
| author_sort | G C Tettamanzi |
| collection | DOAJ |
| description | Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a single atom transistor. By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at 1 GHz are generated, even if operating at 4.2 K, with no magnetic field applied, and only when one barrier is addressed by sinusoidal voltage cycles. |
| first_indexed | 2024-03-12T16:48:33Z |
| format | Article |
| id | doaj.art-60df1479f3894c148d09d70809879b4f |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:48:33Z |
| publishDate | 2014-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-60df1479f3894c148d09d70809879b4f2023-08-08T11:27:36ZengIOP PublishingNew Journal of Physics1367-26302014-01-0116606303610.1088/1367-2630/16/6/063036Charge pumping through a single donor atomG C Tettamanzi0R Wacquez1S Rogge2School of Physics and Australian Centre of Excellence for Quantum Computation and Communication Technology , UNSW, Sydney, AustraliaCEA, LETI, MINATEC Campus , 17 rue des Martyrs, F-38054 Grenoble, FranceSchool of Physics and Australian Centre of Excellence for Quantum Computation and Communication Technology , UNSW, Sydney, AustraliaPresented in this paper is a proof-of-concept for a new approach to single electron pumping based on a single atom transistor. By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at 1 GHz are generated, even if operating at 4.2 K, with no magnetic field applied, and only when one barrier is addressed by sinusoidal voltage cycles.https://doi.org/10.1088/1367-2630/16/6/063036MOSFETssingle atom transistorscharge pumpingelectron sourceselectronsfield effect transistors |
| spellingShingle | G C Tettamanzi R Wacquez S Rogge Charge pumping through a single donor atom New Journal of Physics MOSFETs single atom transistors charge pumping electron sources electrons field effect transistors |
| title | Charge pumping through a single donor atom |
| title_full | Charge pumping through a single donor atom |
| title_fullStr | Charge pumping through a single donor atom |
| title_full_unstemmed | Charge pumping through a single donor atom |
| title_short | Charge pumping through a single donor atom |
| title_sort | charge pumping through a single donor atom |
| topic | MOSFETs single atom transistors charge pumping electron sources electrons field effect transistors |
| url | https://doi.org/10.1088/1367-2630/16/6/063036 |
| work_keys_str_mv | AT gctettamanzi chargepumpingthroughasingledonoratom AT rwacquez chargepumpingthroughasingledonoratom AT srogge chargepumpingthroughasingledonoratom |