Charge pumping through a single donor atom
Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a single atom transistor. By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at 1 GHz are generated, even if operating at 4.2 K, with no magnetic...
Main Authors: | G C Tettamanzi, R Wacquez, S Rogge |
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Format: | Article |
Language: | English |
Published: |
IOP Publishing
2014-01-01
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Series: | New Journal of Physics |
Subjects: | |
Online Access: | https://doi.org/10.1088/1367-2630/16/6/063036 |
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