Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser

Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser

Silicon-vacancy (VSi) centers in silicon carbide (SiC) are expected to serve as solid qubits, which can be used in quantum computing and sensing. As a new controllable color center fabrication method, femtosecond (fs) laser writing has been gradually applied in the preparation of VSi in SiC. In this...

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Bibliographic Details
Main Authors: Jiayu Liu, Zongwei Xu, Ying Song, Hong Wang, Bing Dong, Shaobei Li, Jia Ren, Qiang Li, Mathias Rommel, Xinhua Gu, Bowen Liu, Minglie Hu, Fengzhou Fang
Format: Article
Language:English
Published: AIP Publishing LLC 2020-12-01
Series:Nanotechnology and Precision Engineering
Subjects:
Silicon-vacancy defect
Silicon carbide
Femtosecond laser writing
Confocal photoluminescence spectroscopy
Raman spectroscopy
Atomic force microscopy
Online Access:http://www.sciencedirect.com/science/article/pii/S2589554020300386

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http://www.sciencedirect.com/science/article/pii/S2589554020300386

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