Controlling the Carrier Injection Efficiency in 3D Nanocrystalline Silicon Floating Gate Memory by Novel Design of Control Layer

Controlling the Carrier Injection Efficiency in 3D Nanocrystalline Silicon Floating Gate Memory by Novel Design of Control Layer

Three-dimensional NAND flash memory with high carrier injection efficiency has been of great interest to computing in memory for its stronger capability to deal with big data than that of conventional von Neumann architecture. Here, we first report the carrier injection efficiency of 3D NAND flash m...

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Bibliographic Details
Main Authors: Hongsheng Hu, Zhongyuan Ma, Xinyue Yu, Tong Chen, Chengfeng Zhou, Wei Li, Kunji Chen, Jun Xu, Ling Xu
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Nanomaterials
Subjects:
C–V memory window
nanocrystalline Si
floating gate memory
Online Access:https://www.mdpi.com/2079-4991/13/6/962

Internet

https://www.mdpi.com/2079-4991/13/6/962

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