A digital clock and data strobe aligner for write calibration of dynamic random access memory

Abstract This paper proposes a digital clock and data strobe aligner for write calibration of dynamic random access memory (DRAM). The edge recognizer determines the input phase skew between a falling edge of clock and a rising edge of data strobe (DQS) signal to maximize setup and hold margins of D...

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Main Authors: Chae‐Young Jung, Won‐Young Lee
Format: Article
Language:English
Published: Wiley 2022-03-01
Series:Electronics Letters
Online Access:https://doi.org/10.1049/ell2.12428
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author Chae‐Young Jung
Won‐Young Lee
author_facet Chae‐Young Jung
Won‐Young Lee
author_sort Chae‐Young Jung
collection DOAJ
description Abstract This paper proposes a digital clock and data strobe aligner for write calibration of dynamic random access memory (DRAM). The edge recognizer determines the input phase skew between a falling edge of clock and a rising edge of data strobe (DQS) signal to maximize setup and hold margins of DQS and clock synchronization. According to experimental results, the proposed circuit achieves the minimum and maximum output skews are −6.9 ps and 7.5 ps when DQS skews of ±227 ps are applied. The chip has been fabricated in 180 nm CMOS technology and the active chip area is 0.091 mm2.
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spelling doaj.art-60f5a57b95634a6482700c591d2abefd2022-12-22T00:19:42ZengWileyElectronics Letters0013-51941350-911X2022-03-0158726827010.1049/ell2.12428A digital clock and data strobe aligner for write calibration of dynamic random access memoryChae‐Young Jung0Won‐Young Lee1Department of Electronic and IT Media Engineering Seoul National University of Science and Technology Seoul KoreaDepartment of Electronic and IT Media Engineering Seoul National University of Science and Technology Seoul KoreaAbstract This paper proposes a digital clock and data strobe aligner for write calibration of dynamic random access memory (DRAM). The edge recognizer determines the input phase skew between a falling edge of clock and a rising edge of data strobe (DQS) signal to maximize setup and hold margins of DQS and clock synchronization. According to experimental results, the proposed circuit achieves the minimum and maximum output skews are −6.9 ps and 7.5 ps when DQS skews of ±227 ps are applied. The chip has been fabricated in 180 nm CMOS technology and the active chip area is 0.091 mm2.https://doi.org/10.1049/ell2.12428
spellingShingle Chae‐Young Jung
Won‐Young Lee
A digital clock and data strobe aligner for write calibration of dynamic random access memory
Electronics Letters
title A digital clock and data strobe aligner for write calibration of dynamic random access memory
title_full A digital clock and data strobe aligner for write calibration of dynamic random access memory
title_fullStr A digital clock and data strobe aligner for write calibration of dynamic random access memory
title_full_unstemmed A digital clock and data strobe aligner for write calibration of dynamic random access memory
title_short A digital clock and data strobe aligner for write calibration of dynamic random access memory
title_sort digital clock and data strobe aligner for write calibration of dynamic random access memory
url https://doi.org/10.1049/ell2.12428
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AT wonyounglee adigitalclockanddatastrobealignerforwritecalibrationofdynamicrandomaccessmemory
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