Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation

Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation

In this work, the impact of nitrogen doping (N-doping) on the distribution of sub-gap states in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is qualitatively analyzed by technology computer-aided design (TCAD) simulation. According to the experimental characteristics, the numerical simula...

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Bibliographic Details
Main Authors: Zheng Zhu, Wei Cao, Xiaoming Huang, Zheng Shi, Dong Zhou, Weizong Xu
Format: Article
Language:English
Published: MDPI AG 2022-04-01
Series:Micromachines
Subjects:
a-IGZO TFTs
sub-gap states
nitrogen-doping
numerical simulation
stability
Online Access:https://www.mdpi.com/2072-666X/13/4/617

Internet

https://www.mdpi.com/2072-666X/13/4/617

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