Electron mobility and drain current in strained-Si MOSFET
Electron mobility and drain current in a strained-Si MOSFET have been calculated and compared with the mobility and drain current obtained for the relaxed material. In the first step, our mobility model has been calibrated to the “universal mobility” according to the available experimental data for...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
National Institute of Telecommunications
2023-06-01
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| Series: | Journal of Telecommunications and Information Technology |
| Subjects: | |
| Online Access: | https://jtit.pl/jtit/article/view/835 |