Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range

Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range

In this work, novel hybrid gate Ultra-Thin-Barrier HEMTs (HG-UTB HEMTs) featuring a wide modulation range of threshold voltages (<i>V</i><sub>TH</sub>) are proposed. The hybrid gate structure consists of a p-GaN gate part and a MIS-gate part. Due to the depletion effect assis...

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Bibliographic Details
Main Authors: Shouyi Wang, Qi Zhou, Kuangli Chen, Pengxiang Bai, Jinghai Wang, Liyang Zhu, Chunhua Zhou, Wei Gao, Bo Zhang
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Materials
Subjects:
AlGaN/GaN HEMTs
threshold voltage modulation
ultra-thin barrier
normally off
enhancement-mode
p-GaN gate
Online Access:https://www.mdpi.com/1996-1944/15/2/654

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https://www.mdpi.com/1996-1944/15/2/654

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