Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range
In this work, novel hybrid gate Ultra-Thin-Barrier HEMTs (HG-UTB HEMTs) featuring a wide modulation range of threshold voltages (<i>V</i><sub>TH</sub>) are proposed. The hybrid gate structure consists of a p-GaN gate part and a MIS-gate part. Due to the depletion effect assis...
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| Online Access: | https://www.mdpi.com/1996-1944/15/2/654 |
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| author | Shouyi Wang Qi Zhou Kuangli Chen Pengxiang Bai Jinghai Wang Liyang Zhu Chunhua Zhou Wei Gao Bo Zhang |
| author_facet | Shouyi Wang Qi Zhou Kuangli Chen Pengxiang Bai Jinghai Wang Liyang Zhu Chunhua Zhou Wei Gao Bo Zhang |
| author_sort | Shouyi Wang |
| collection | DOAJ |
| description | In this work, novel hybrid gate Ultra-Thin-Barrier HEMTs (HG-UTB HEMTs) featuring a wide modulation range of threshold voltages (<i>V</i><sub>TH</sub>) are proposed. The hybrid gate structure consists of a p-GaN gate part and a MIS-gate part. Due to the depletion effect assisted by the p-GaN gate part, the <i>V</i><sub>TH</sub> of HG-UTB HEMTs can be significantly increased. By tailoring the hole concentration of the p-GaN gate, the <i>V</i><sub>TH</sub> can be flexibly modulated from 1.63 V to 3.84 V. Moreover, the MIS-gate part enables the effective reduction in the electric field (E-field) peak at the drain-side edge of the p-GaN gate, which reduces the potential gate degradation originating from the high E-field in the p-GaN gate. Meanwhile, the HG-UTB HEMTs exhibit a maximum drain current as high as 701 mA/mm and correspond to an on-resistance of 10.1 Ω mm and a breakdown voltage of 610 V. The proposed HG-UTB HEMTs are a potential means to achieve normally off GaN HEMTs with a promising device performance and featuring a flexible V<sub>TH</sub> modulation range, which is of great interest for versatile power applications. |
| first_indexed | 2024-03-10T01:02:31Z |
| format | Article |
| id | doaj.art-6167f71411e44026829e10348c2b53d2 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T01:02:31Z |
| publishDate | 2022-01-01 |
| publisher | MDPI AG |
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| series | Materials |
| spelling | doaj.art-6167f71411e44026829e10348c2b53d22023-11-23T14:32:41ZengMDPI AGMaterials1996-19442022-01-0115265410.3390/ma15020654Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation RangeShouyi Wang0Qi Zhou1Kuangli Chen2Pengxiang Bai3Jinghai Wang4Liyang Zhu5Chunhua Zhou6Wei Gao7Bo Zhang8State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Film and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Film and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Film and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Film and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Film and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Film and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Film and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Film and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, ChinaIn this work, novel hybrid gate Ultra-Thin-Barrier HEMTs (HG-UTB HEMTs) featuring a wide modulation range of threshold voltages (<i>V</i><sub>TH</sub>) are proposed. The hybrid gate structure consists of a p-GaN gate part and a MIS-gate part. Due to the depletion effect assisted by the p-GaN gate part, the <i>V</i><sub>TH</sub> of HG-UTB HEMTs can be significantly increased. By tailoring the hole concentration of the p-GaN gate, the <i>V</i><sub>TH</sub> can be flexibly modulated from 1.63 V to 3.84 V. Moreover, the MIS-gate part enables the effective reduction in the electric field (E-field) peak at the drain-side edge of the p-GaN gate, which reduces the potential gate degradation originating from the high E-field in the p-GaN gate. Meanwhile, the HG-UTB HEMTs exhibit a maximum drain current as high as 701 mA/mm and correspond to an on-resistance of 10.1 Ω mm and a breakdown voltage of 610 V. The proposed HG-UTB HEMTs are a potential means to achieve normally off GaN HEMTs with a promising device performance and featuring a flexible V<sub>TH</sub> modulation range, which is of great interest for versatile power applications.https://www.mdpi.com/1996-1944/15/2/654AlGaN/GaN HEMTsthreshold voltage modulationultra-thin barriernormally offenhancement-modep-GaN gate |
| spellingShingle | Shouyi Wang Qi Zhou Kuangli Chen Pengxiang Bai Jinghai Wang Liyang Zhu Chunhua Zhou Wei Gao Bo Zhang Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range Materials AlGaN/GaN HEMTs threshold voltage modulation ultra-thin barrier normally off enhancement-mode p-GaN gate |
| title | Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range |
| title_full | Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range |
| title_fullStr | Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range |
| title_full_unstemmed | Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range |
| title_short | Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range |
| title_sort | simulation study of the use of algan gan ultra thin barrier hemts with hybrid gates for achieving a wide threshold voltage modulation range |
| topic | AlGaN/GaN HEMTs threshold voltage modulation ultra-thin barrier normally off enhancement-mode p-GaN gate |
| url | https://www.mdpi.com/1996-1944/15/2/654 |
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