Distinctive Deep‐Level Defects in Non‐Stoichiometric Sb2Se3 Photovoltaic Materials

Distinctive Deep‐Level Defects in Non‐Stoichiometric Sb2Se3 Photovoltaic Materials

Abstract Characterizing defect levels and identifying the compositional elements in semiconducting materials are important research subject for understanding the mechanism of photogenerated carrier recombination and reducing energy loss during solar energy conversion. Here it shows that deep‐level d...

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Bibliographic Details
Main Authors: Weitao Lian, Rui Cao, Gang Li, Huiling Cai, Zhiyuan Cai, Rongfeng Tang, Changfei Zhu, Shangfeng Yang, Tao Chen
Format: Article
Language:English
Published: Wiley 2022-03-01
Series:Advanced Science
Subjects:
antimony triselenide
carrier lifetime
deep‐level defect
DLTS
SRH recombination
Online Access:https://doi.org/10.1002/advs.202105268

Internet

https://doi.org/10.1002/advs.202105268

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