Distinctive Deep‐Level Defects in Non‐Stoichiometric Sb2Se3 Photovoltaic Materials
Abstract Characterizing defect levels and identifying the compositional elements in semiconducting materials are important research subject for understanding the mechanism of photogenerated carrier recombination and reducing energy loss during solar energy conversion. Here it shows that deep‐level d...
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| Format: | Article |
| Language: | English |
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Wiley
2022-03-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202105268 |
| _version_ | 1811273491089981440 |
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| author | Weitao Lian Rui Cao Gang Li Huiling Cai Zhiyuan Cai Rongfeng Tang Changfei Zhu Shangfeng Yang Tao Chen |
| author_facet | Weitao Lian Rui Cao Gang Li Huiling Cai Zhiyuan Cai Rongfeng Tang Changfei Zhu Shangfeng Yang Tao Chen |
| author_sort | Weitao Lian |
| collection | DOAJ |
| description | Abstract Characterizing defect levels and identifying the compositional elements in semiconducting materials are important research subject for understanding the mechanism of photogenerated carrier recombination and reducing energy loss during solar energy conversion. Here it shows that deep‐level defect in antimony triselenide (Sb2Se3) is sensitively dependent on the stoichiometry. For the first time it experimentally observes the formation of amphoteric SbSe defect in Sb‐rich Sb2Se3. This amphoteric defect possesses equivalent capability of trapping electron and hole, which plays critical role in charge recombination and device performance. In comparative investigation, it also uncovers the reason why Se‐rich Sb2Se3 is able to deliver high device performance from the defect formation perspective. This study demonstrates the crucial defect types in Sb2Se3 and provides a guidance toward the fabrication of efficient Sb2Se3 photovoltaic device and relevant optoelectronic devices. |
| first_indexed | 2024-04-12T23:00:05Z |
| format | Article |
| id | doaj.art-6168d3f70fe54fbd8602f73b1e167ff3 |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-04-12T23:00:05Z |
| publishDate | 2022-03-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-6168d3f70fe54fbd8602f73b1e167ff32022-12-22T03:13:05ZengWileyAdvanced Science2198-38442022-03-0199n/an/a10.1002/advs.202105268Distinctive Deep‐Level Defects in Non‐Stoichiometric Sb2Se3 Photovoltaic MaterialsWeitao Lian0Rui Cao1Gang Li2Huiling Cai3Zhiyuan Cai4Rongfeng Tang5Changfei Zhu6Shangfeng Yang7Tao Chen8Hefei National Laboratory for Physical Sciences at Microscale CAS Key Laboratory of Materials for Energy Conversion Department of Materials Science and Engineering School of Chemistry and Materials Science University of Science and Technology of China Hefei Anhui 230026 ChinaHefei National Laboratory for Physical Sciences at Microscale CAS Key Laboratory of Materials for Energy Conversion Department of Materials Science and Engineering School of Chemistry and Materials Science University of Science and Technology of China Hefei Anhui 230026 ChinaHefei National Laboratory for Physical Sciences at Microscale CAS Key Laboratory of Materials for Energy Conversion Department of Materials Science and Engineering School of Chemistry and Materials Science University of Science and Technology of China Hefei Anhui 230026 ChinaHefei National Laboratory for Physical Sciences at Microscale CAS Key Laboratory of Materials for Energy Conversion Department of Materials Science and Engineering School of Chemistry and Materials Science University of Science and Technology of China Hefei Anhui 230026 ChinaHefei National Laboratory for Physical Sciences at Microscale CAS Key Laboratory of Materials for Energy Conversion Department of Materials Science and Engineering School of Chemistry and Materials Science University of Science and Technology of China Hefei Anhui 230026 ChinaHefei National Laboratory for Physical Sciences at Microscale CAS Key Laboratory of Materials for Energy Conversion Department of Materials Science and Engineering School of Chemistry and Materials Science University of Science and Technology of China Hefei Anhui 230026 ChinaHefei National Laboratory for Physical Sciences at Microscale CAS Key Laboratory of Materials for Energy Conversion Department of Materials Science and Engineering School of Chemistry and Materials Science University of Science and Technology of China Hefei Anhui 230026 ChinaHefei National Laboratory for Physical Sciences at Microscale CAS Key Laboratory of Materials for Energy Conversion Department of Materials Science and Engineering School of Chemistry and Materials Science University of Science and Technology of China Hefei Anhui 230026 ChinaHefei National Laboratory for Physical Sciences at Microscale CAS Key Laboratory of Materials for Energy Conversion Department of Materials Science and Engineering School of Chemistry and Materials Science University of Science and Technology of China Hefei Anhui 230026 ChinaAbstract Characterizing defect levels and identifying the compositional elements in semiconducting materials are important research subject for understanding the mechanism of photogenerated carrier recombination and reducing energy loss during solar energy conversion. Here it shows that deep‐level defect in antimony triselenide (Sb2Se3) is sensitively dependent on the stoichiometry. For the first time it experimentally observes the formation of amphoteric SbSe defect in Sb‐rich Sb2Se3. This amphoteric defect possesses equivalent capability of trapping electron and hole, which plays critical role in charge recombination and device performance. In comparative investigation, it also uncovers the reason why Se‐rich Sb2Se3 is able to deliver high device performance from the defect formation perspective. This study demonstrates the crucial defect types in Sb2Se3 and provides a guidance toward the fabrication of efficient Sb2Se3 photovoltaic device and relevant optoelectronic devices.https://doi.org/10.1002/advs.202105268antimony triselenidecarrier lifetimedeep‐level defectDLTSSRH recombination |
| spellingShingle | Weitao Lian Rui Cao Gang Li Huiling Cai Zhiyuan Cai Rongfeng Tang Changfei Zhu Shangfeng Yang Tao Chen Distinctive Deep‐Level Defects in Non‐Stoichiometric Sb2Se3 Photovoltaic Materials Advanced Science antimony triselenide carrier lifetime deep‐level defect DLTS SRH recombination |
| title | Distinctive Deep‐Level Defects in Non‐Stoichiometric Sb2Se3 Photovoltaic Materials |
| title_full | Distinctive Deep‐Level Defects in Non‐Stoichiometric Sb2Se3 Photovoltaic Materials |
| title_fullStr | Distinctive Deep‐Level Defects in Non‐Stoichiometric Sb2Se3 Photovoltaic Materials |
| title_full_unstemmed | Distinctive Deep‐Level Defects in Non‐Stoichiometric Sb2Se3 Photovoltaic Materials |
| title_short | Distinctive Deep‐Level Defects in Non‐Stoichiometric Sb2Se3 Photovoltaic Materials |
| title_sort | distinctive deep level defects in non stoichiometric sb2se3 photovoltaic materials |
| topic | antimony triselenide carrier lifetime deep‐level defect DLTS SRH recombination |
| url | https://doi.org/10.1002/advs.202105268 |
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