Influence of Terminal Field Plate on Breakdown Voltage in GaN-Based Schottky Barrier Diode
In order to improve the breakdown voltage of the Schottky barrier diode(SBD), a GaN-based SBD with a field plate(FP) structure has been systematically studied. Based on the Silvaco TCAD software, and by the method of controlling variables, that is, in some conditions of the different field plate len...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Editorial Department of Journal of Nantong University (Natural Science Edition)
2021-09-01
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| Series: | Nantong Daxue xuebao. Ziran kexue ban |
| Subjects: |