Probe-Dependent Residual Error Analysis for Accurate On-Wafer MOSFET Measurements up to 110 GHz
Advances in CMOS technology have enabled MOSFET with cutoff and maximum oscillation frequencies (ft and fmax) in the 400 GHz range, thus opening the path to CMOS-based applications at millimeter-wave (mm-wave) and sub-THz frequencies. Accurate compact models and therefore on-wafer MOSFET measurement...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10146381/ |