DESIGN OF HIGH-SPEED IGBT DEVICE
Results of the investigation of IGBT manufacturing technology parameters influence on its dynamic features are presented. The important role of impurities concentration in various parts of IGBT structure (concentration level in the emitter of the bipolar transistor as apart of the IGBT structure, im...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/182 |