High−Performance 4H−SiC UV p−i−n Photodiode: Numerical Simulations and Experimental Results

In this work, the optical response of a high−performance 4H−SiC−based p−i−n ultraviolet (UV) photodiode was studied by means of an ad hoc numerical model. The spectral responsivity and the corresponding external photodiode quantum efficiency were calculated under different reverse biases, up to 60 V...

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Bibliographic Details
Main Authors: Sandro Rao, Elisa D. Mallemace, Francesco G. Della Corte
Format: Article
Language:English
Published: MDPI AG 2022-06-01
Series:Electronics
Subjects:
Online Access:https://www.mdpi.com/2079-9292/11/12/1839