High−Performance 4H−SiC UV p−i−n Photodiode: Numerical Simulations and Experimental Results
In this work, the optical response of a high−performance 4H−SiC−based p−i−n ultraviolet (UV) photodiode was studied by means of an ad hoc numerical model. The spectral responsivity and the corresponding external photodiode quantum efficiency were calculated under different reverse biases, up to 60 V...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-06-01
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Series: | Electronics |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-9292/11/12/1839 |