Experimental Investigation and Model Analysis on a GaN Electrostatic Discharge Clamp

Experimental Investigation and Model Analysis on a GaN Electrostatic Discharge Clamp

This work carried out the experimental investigation and model analysis on a GaN electrostatic discharge (ESD) clamp, which features a discharge high electron mobility transistor (HEMT) and a voltage divider formed by a lateral field effect rectifier (L-FER) chain and a resistor in series. Firstly,...

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Bibliographic Details
Main Authors: Yijun Shi, Zhiyuan He, Yun Huang, Zongqi Cai, Yiqiang Chen, Chang Liu, Chao Liu, Wanjun Chen, Ruize Sun, Guoguang Lu
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Electrostatic discharge
ESD clamp
GaN HEMT
triggering voltage
human body model
Online Access:https://ieeexplore.ieee.org/document/9932671/

Internet

https://ieeexplore.ieee.org/document/9932671/

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