High Performance Phototransistor Based on 0D-CsPbBr<sub>3</sub>/2D-MoS<sub>2</sub> Heterostructure with Gate Tunable Photo-Response
Monolayer MoS<sub>2</sub> has been widely researched in high performance phototransistors for its high carrier mobility and strong photoelectric conversion ability. However, some defects in MoS<sub>2</sub>, such as vacancies or impurities, provide more possibilities for carri...
Main Authors: | , , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2025-02-01
|
Series: | Nanomaterials |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-4991/15/4/307 |