Investigation of the physical properties of nanoscale porous silicon films
The structure and physical properties of porous silicon obtained by electrochemical etching of monocrystalline silicon with n-type conductivity in a mixture of hydrofluoric acid and ethyl alcohol were investigated. Experimental layers were formed by varying the etching parameters. Samples were studi...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Al-Farabi Kazakh National University
2016-10-01
|
| Series: | Physical Sciences and Technology |
| Subjects: | |
| Online Access: | http://phst/index.php/journal/article/view/54 |
| _version_ | 1827778952645574656 |
|---|---|
| author | S.M. Manakov Ye. Sagidolda |
| author_facet | S.M. Manakov Ye. Sagidolda |
| author_sort | S.M. Manakov |
| collection | DOAJ |
| description | The structure and physical properties of porous silicon obtained by electrochemical etching of monocrystalline silicon with n-type conductivity in a mixture of hydrofluoric acid and ethyl alcohol were investigated. Experimental layers were formed by varying the etching parameters. Samples were studied using the methods of atomic force microscopy (AFM),scanning electron microscopy (SEM), Raman spectroscopy (RS) and photoluminescence spectrometry (PL). It was found that the PL intensity increased with increasing etching time. It was demonstrated that by varying of technological parameters and conditions of the etching process we can control the size of nanocrystals and manufacture nanostructuresof porous silicon film with improved
properties. |
| first_indexed | 2024-03-11T14:44:18Z |
| format | Article |
| id | doaj.art-61cb34b308f34455ba241527c17ad802 |
| institution | Directory Open Access Journal |
| issn | 2409-6121 |
| language | English |
| last_indexed | 2024-03-11T14:44:18Z |
| publishDate | 2016-10-01 |
| publisher | Al-Farabi Kazakh National University |
| record_format | Article |
| series | Physical Sciences and Technology |
| spelling | doaj.art-61cb34b308f34455ba241527c17ad8022023-10-30T13:11:36ZengAl-Farabi Kazakh National UniversityPhysical Sciences and Technology2409-61212016-10-0121Investigation of the physical properties of nanoscale porous silicon filmsS.M. Manakov0Ye. Sagidolda1Al-Farabi Kazakh National University, NNLOT, al-Farabi 71, 050040 Almaty, KazakhstanAl-Farabi Kazakh National University, Laboratory of Engineering, al-Farabi 71, 050040 Almaty, KazakhstanThe structure and physical properties of porous silicon obtained by electrochemical etching of monocrystalline silicon with n-type conductivity in a mixture of hydrofluoric acid and ethyl alcohol were investigated. Experimental layers were formed by varying the etching parameters. Samples were studied using the methods of atomic force microscopy (AFM),scanning electron microscopy (SEM), Raman spectroscopy (RS) and photoluminescence spectrometry (PL). It was found that the PL intensity increased with increasing etching time. It was demonstrated that by varying of technological parameters and conditions of the etching process we can control the size of nanocrystals and manufacture nanostructuresof porous silicon film with improved properties.http://phst/index.php/journal/article/view/54Key wordsporous siliconelectrochemical etchingphotoluminescencenanocrystals. PACS numbers82.45.Vp |
| spellingShingle | S.M. Manakov Ye. Sagidolda Investigation of the physical properties of nanoscale porous silicon films Physical Sciences and Technology Key words porous silicon electrochemical etching photoluminescence nanocrystals. PACS numbers 82.45.Vp |
| title | Investigation of the physical properties of nanoscale porous silicon films |
| title_full | Investigation of the physical properties of nanoscale porous silicon films |
| title_fullStr | Investigation of the physical properties of nanoscale porous silicon films |
| title_full_unstemmed | Investigation of the physical properties of nanoscale porous silicon films |
| title_short | Investigation of the physical properties of nanoscale porous silicon films |
| title_sort | investigation of the physical properties of nanoscale porous silicon films |
| topic | Key words porous silicon electrochemical etching photoluminescence nanocrystals. PACS numbers 82.45.Vp |
| url | http://phst/index.php/journal/article/view/54 |
| work_keys_str_mv | AT smmanakov investigationofthephysicalpropertiesofnanoscaleporoussiliconfilms AT yesagidolda investigationofthephysicalpropertiesofnanoscaleporoussiliconfilms |