Dynamic Error Recovery Flow Prediction Based on Reusable Machine Learning for Low Latency NAND Flash Memory Under Process Variation

NAND flash memory is becoming smaller and denser to have a larger storage capacity as technologies related to fine processes are developed. As a side effect of high-density integration, the memory can be vulnerable to circuit-level noise such as random telegraph noise, decreasing the reliability of...

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Bibliographic Details
Main Authors: Minyoung Hwang, Jeongju Jee, Joonhyuk Kang, Hyuncheol Park, Seonmin Lee, Jinyoung Kim
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9940942/