Estimation of electron temperature for SiO2 plasma induced by laser
In this work; Silicon dioxide (SiO2) were fabricated by pulsed laser ablation (PLA). The electron temperature was calculated by reading the data of I-V curve of Langmuir probe which was employed as a diagnostic technique for measuring plasma properties. Pulsed Nd:YA Glaser was used for measuring th...
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| Format: | Article |
| Language: | English |
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University of Baghdad
2019-02-01
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| Series: | Iraqi Journal of Physics |
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| Online Access: | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/250 |