Estimation of electron temperature for SiO2 plasma induced by laser

In this work; Silicon dioxide (SiO2) were fabricated by pulsed laser ablation (PLA). The electron temperature was calculated by reading the data of I-V curve of Langmuir probe which was employed as a diagnostic technique for measuring plasma properties. Pulsed Nd:YA Glaser was used for measuring th...

Full description

Bibliographic Details
Main Author: Mohammed R. Abdulameer
Format: Article
Language:English
Published: University of Baghdad 2019-02-01
Series:Iraqi Journal of Physics
Subjects:
Online Access:https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/250
_version_ 1797871369904455680
author Mohammed R. Abdulameer
author_facet Mohammed R. Abdulameer
author_sort Mohammed R. Abdulameer
collection DOAJ
description In this work; Silicon dioxide (SiO2) were fabricated by pulsed laser ablation (PLA). The electron temperature was calculated by reading the data of I-V curve of Langmuir probe which was employed as a diagnostic technique for measuring plasma properties. Pulsed Nd:YA Glaser was used for measuring the electron temperature of SiO2 plasma plume under vacuum environment with varying both pressure and axial distance from the target surface. The electron temperature has been measured experimentally and the effects of each of pressure and Langmuir probe distance from the target were studied. An inverse relationship between electron temperature and both pressure and axial distance was observed.
first_indexed 2024-04-10T00:42:50Z
format Article
id doaj.art-621b4bcf8e4149eb85e89f7685ac92b1
institution Directory Open Access Journal
issn 2070-4003
2664-5548
language English
last_indexed 2024-04-10T00:42:50Z
publishDate 2019-02-01
publisher University of Baghdad
record_format Article
series Iraqi Journal of Physics
spelling doaj.art-621b4bcf8e4149eb85e89f7685ac92b12023-03-14T05:26:28ZengUniversity of BaghdadIraqi Journal of Physics2070-40032664-55482019-02-01132810.30723/ijp.v13i28.250Estimation of electron temperature for SiO2 plasma induced by laserMohammed R. Abdulameer In this work; Silicon dioxide (SiO2) were fabricated by pulsed laser ablation (PLA). The electron temperature was calculated by reading the data of I-V curve of Langmuir probe which was employed as a diagnostic technique for measuring plasma properties. Pulsed Nd:YA Glaser was used for measuring the electron temperature of SiO2 plasma plume under vacuum environment with varying both pressure and axial distance from the target surface. The electron temperature has been measured experimentally and the effects of each of pressure and Langmuir probe distance from the target were studied. An inverse relationship between electron temperature and both pressure and axial distance was observed. https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/250Laser induced plasma, Langmuir probe, electron temperature, SiO2 thin film.
spellingShingle Mohammed R. Abdulameer
Estimation of electron temperature for SiO2 plasma induced by laser
Iraqi Journal of Physics
Laser induced plasma, Langmuir probe, electron temperature, SiO2 thin film.
title Estimation of electron temperature for SiO2 plasma induced by laser
title_full Estimation of electron temperature for SiO2 plasma induced by laser
title_fullStr Estimation of electron temperature for SiO2 plasma induced by laser
title_full_unstemmed Estimation of electron temperature for SiO2 plasma induced by laser
title_short Estimation of electron temperature for SiO2 plasma induced by laser
title_sort estimation of electron temperature for sio2 plasma induced by laser
topic Laser induced plasma, Langmuir probe, electron temperature, SiO2 thin film.
url https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/250
work_keys_str_mv AT mohammedrabdulameer estimationofelectrontemperatureforsio2plasmainducedbylaser