Estimation of electron temperature for SiO2 plasma induced by laser
In this work; Silicon dioxide (SiO2) were fabricated by pulsed laser ablation (PLA). The electron temperature was calculated by reading the data of I-V curve of Langmuir probe which was employed as a diagnostic technique for measuring plasma properties. Pulsed Nd:YA Glaser was used for measuring th...
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Format: | Article |
Language: | English |
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University of Baghdad
2019-02-01
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Series: | Iraqi Journal of Physics |
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Online Access: | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/250 |
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author | Mohammed R. Abdulameer |
author_facet | Mohammed R. Abdulameer |
author_sort | Mohammed R. Abdulameer |
collection | DOAJ |
description |
In this work; Silicon dioxide (SiO2) were fabricated by pulsed
laser ablation (PLA). The electron temperature was calculated by
reading the data of I-V curve of Langmuir probe which was
employed as a diagnostic technique for measuring plasma properties.
Pulsed Nd:YA Glaser was used for measuring the electron
temperature of SiO2 plasma plume under vacuum environment with
varying both pressure and axial distance from the target surface. The
electron temperature has been measured experimentally and the
effects of each of pressure and Langmuir probe distance from the
target were studied. An inverse relationship between electron
temperature and both pressure and axial distance was observed.
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first_indexed | 2024-04-10T00:42:50Z |
format | Article |
id | doaj.art-621b4bcf8e4149eb85e89f7685ac92b1 |
institution | Directory Open Access Journal |
issn | 2070-4003 2664-5548 |
language | English |
last_indexed | 2024-04-10T00:42:50Z |
publishDate | 2019-02-01 |
publisher | University of Baghdad |
record_format | Article |
series | Iraqi Journal of Physics |
spelling | doaj.art-621b4bcf8e4149eb85e89f7685ac92b12023-03-14T05:26:28ZengUniversity of BaghdadIraqi Journal of Physics2070-40032664-55482019-02-01132810.30723/ijp.v13i28.250Estimation of electron temperature for SiO2 plasma induced by laserMohammed R. Abdulameer In this work; Silicon dioxide (SiO2) were fabricated by pulsed laser ablation (PLA). The electron temperature was calculated by reading the data of I-V curve of Langmuir probe which was employed as a diagnostic technique for measuring plasma properties. Pulsed Nd:YA Glaser was used for measuring the electron temperature of SiO2 plasma plume under vacuum environment with varying both pressure and axial distance from the target surface. The electron temperature has been measured experimentally and the effects of each of pressure and Langmuir probe distance from the target were studied. An inverse relationship between electron temperature and both pressure and axial distance was observed. https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/250Laser induced plasma, Langmuir probe, electron temperature, SiO2 thin film. |
spellingShingle | Mohammed R. Abdulameer Estimation of electron temperature for SiO2 plasma induced by laser Iraqi Journal of Physics Laser induced plasma, Langmuir probe, electron temperature, SiO2 thin film. |
title | Estimation of electron temperature for SiO2 plasma induced by laser |
title_full | Estimation of electron temperature for SiO2 plasma induced by laser |
title_fullStr | Estimation of electron temperature for SiO2 plasma induced by laser |
title_full_unstemmed | Estimation of electron temperature for SiO2 plasma induced by laser |
title_short | Estimation of electron temperature for SiO2 plasma induced by laser |
title_sort | estimation of electron temperature for sio2 plasma induced by laser |
topic | Laser induced plasma, Langmuir probe, electron temperature, SiO2 thin film. |
url | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/250 |
work_keys_str_mv | AT mohammedrabdulameer estimationofelectrontemperatureforsio2plasmainducedbylaser |