Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from the high-frequency power amplifier to the high voltage devices used in power electronic systems. Development of GaN HEMT on Si-based substrate is currently the main focus of the industry to reduce the cost...

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Bibliographic Details
Main Authors: Lung-Hsing Hsu, Yung-Yu Lai, Po-Tsung Tu, Catherine Langpoklakpam, Ya-Ting Chang, Yu-Wen Huang, Wen-Chung Lee, An-Jye Tzou, Yuh-Jen Cheng, Chun-Hsiung Lin, Hao-Chung Kuo, Edward Yi Chang
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Micromachines
Subjects:
gallium nitride
high-electron mobility transistor
heterogeneous integration
SOI
QST
Online Access:https://www.mdpi.com/2072-666X/12/10/1159

Internet

https://www.mdpi.com/2072-666X/12/10/1159

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