The Chip-Level and Package-Level Degradation of Cascode GaN Device Under Repetitive Power Cycling Stress

The Chip-Level and Package-Level Degradation of Cascode GaN Device Under Repetitive Power Cycling Stress

In this work, the electrical characteristics’ failure due to the chip-level damage and its relationship with the package-level degradation have been investigated for the Cascode GaN device under long-term repetitive power cycling test (PCT). At first, it is found that, the device&#x20...

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Bibliographic Details
Main Authors: Yijun Shi, Shan Wu, Zhiyuan He, Zongqi Cai, Liye Cheng, Yunliang Rao, Qingzhong Xiao, Yiqiang Chen, Guoguang Lu
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
GaN HEMTs
power cycling test
package degradation
chip-level degradation
Online Access:https://ieeexplore.ieee.org/document/10188904/

Internet

https://ieeexplore.ieee.org/document/10188904/

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