Subthreshold Characteristics of AlGaN/GaN MIS-FinFETs with Controlling Threshold Voltages
AlGaN/GaN metal-insulator-semiconductor field-effect transistors with fin structures (AlGaN/GaN MIS-FinFETs) were fabricated and characterized by changing fin width and using different dielectric layers. The FinFET with 20 nm-thick SiO<sub>2</sub> dielectric layer exhibits a very small s...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-11-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/9/11/1967 |