Damascene versus subtractive line CMP process for resistive memory crossbars BEOL integration

Damascene versus subtractive line CMP process for resistive memory crossbars BEOL integration

In recent years, resistive memories have emerged as a pivotal advancement in the realm of electronics, offering numerous advantages in terms of energy efficiency, scalability, and non-volatility [1]. Characterized by their unique resistive switching behavior, these memories are well-suited for a var...

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Bibliographic Details
Main Authors: Raphaël Dawant, Matthieu Gaudreau, Marc-Antoine Roy, Pierre-Antoine Mouny, Matthieu Valdenaire, Pierre Gliech, Javier Arias Zapata, Malek Zegaoui, Fabien Alibart, Dominique Drouin, Serge Ecoffey
Format: Article
Language:English
Published: Elsevier 2024-06-01
Series:Micro and Nano Engineering
Subjects:
CMP
Resistive memory
Crossbar array
Damascene
Subtractive line
BEOL
Online Access:http://www.sciencedirect.com/science/article/pii/S2590007224000145

Internet

http://www.sciencedirect.com/science/article/pii/S2590007224000145

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