Analysis of SiC/Si Heterojunction Band Energy and Interface State Characteristics for SiC/Si VDMOS
SiC/Si and GaN/Si heterojunction technology has been widely used in power semiconductor devices, and SiC/Si VDMOS and GaN/Si VDMOS were proposed in our previous paper. Based on existing research, breakdown point transfer technology (BPT) was used to optimize SiC/Si VDMOS. Simulation results showed t...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-09-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/14/10/1890 |