Oxynitride Amorphous Carbon Layer for Electrically and Thermally Robust Bipolar Resistive Switching

Oxynitride Amorphous Carbon Layer for Electrically and Thermally Robust Bipolar Resistive Switching

Abstract Advanced resistive random‐access memory (ReRAM) devices based on resistive switching (RS) have been intensely studied for future high‐density nonvolatile memory devices owing to their high scalability, simplified integration, fast operation, and ultralow power consumption. Among the recentl...

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Bibliographic Details
Main Authors: SunHwa Min, Da Seul Hyeon, Gabriel Jang, Jisoo Choi, Jeongwoo Seo, Soyeong Kwon, Dong‐Wook Kim, Jin Pyo Hong
Format: Article
Language:English
Published: Wiley-VCH 2023-03-01
Series:Advanced Electronic Materials
Subjects:
off‐axis reactive sputtering
oxynitride amorphous carbon layer
pyridinic‐nitrogen bonds
pyrrolic‐nitrogen bonds
sp 2 bond conductive filaments
Online Access:https://doi.org/10.1002/aelm.202201090

Internet

https://doi.org/10.1002/aelm.202201090

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