E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology

E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology

AlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commercial E-mode GaN power device technology platform and a systematic study of E/D-mode GaN inverters has been conducted with detail. The key electrical cha...

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Bibliographic Details
Main Authors: Li-Fang Jia, Lian Zhang, Jin-Ping Xiao, Zhe Cheng, De-Feng Lin, Yu-Jie Ai, Jin-Chao Zhao, Yun Zhang
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Micromachines
Subjects:
AlGaN/GaN
E-mode
D-mode
p-GaN
inverter
monolithic integration
Online Access:https://www.mdpi.com/2072-666X/12/6/617

Internet

https://www.mdpi.com/2072-666X/12/6/617

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