E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology
AlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commercial E-mode GaN power device technology platform and a systematic study of E/D-mode GaN inverters has been conducted with detail. The key electrical cha...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-05-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/6/617 |
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| author | Li-Fang Jia Lian Zhang Jin-Ping Xiao Zhe Cheng De-Feng Lin Yu-Jie Ai Jin-Chao Zhao Yun Zhang |
| author_facet | Li-Fang Jia Lian Zhang Jin-Ping Xiao Zhe Cheng De-Feng Lin Yu-Jie Ai Jin-Chao Zhao Yun Zhang |
| author_sort | Li-Fang Jia |
| collection | DOAJ |
| description | AlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commercial E-mode GaN power device technology platform and a systematic study of E/D-mode GaN inverters has been conducted with detail. The key electrical characters have been analyzed from room temperature (RT) to 200 °C. Small variations of the inverters are observed at different temperatures. The logic swing voltage of 2.91 V and 2.89 V are observed at RT and 200 °C at a supply voltage of 3 V. Correspondingly, low/high input noise margins of 0.78 V/1.67 V and 0.68 V/1.72 V are observed at RT and 200 °C. The inverters also demonstrate small rising edge time of the output signal. The results show great potential for GaN smart power integrated circuit (IC) application. |
| first_indexed | 2024-03-10T11:00:26Z |
| format | Article |
| id | doaj.art-62706bc3404e427898fe371b344dd625 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T11:00:26Z |
| publishDate | 2021-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-62706bc3404e427898fe371b344dd6252023-11-21T21:34:46ZengMDPI AGMicromachines2072-666X2021-05-0112661710.3390/mi12060617E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT TechnologyLi-Fang Jia0Lian Zhang1Jin-Ping Xiao2Zhe Cheng3De-Feng Lin4Yu-Jie Ai5Jin-Chao Zhao6Yun Zhang7Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, ChinaLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, ChinaSilan Integrated Circuit Co., Ltd., Hangzhou 310018, ChinaLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, ChinaLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, ChinaLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, ChinaXiamen Silan Advanced Compound Semiconductor Co., Ltd., Xiamen 361026, ChinaLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, ChinaAlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commercial E-mode GaN power device technology platform and a systematic study of E/D-mode GaN inverters has been conducted with detail. The key electrical characters have been analyzed from room temperature (RT) to 200 °C. Small variations of the inverters are observed at different temperatures. The logic swing voltage of 2.91 V and 2.89 V are observed at RT and 200 °C at a supply voltage of 3 V. Correspondingly, low/high input noise margins of 0.78 V/1.67 V and 0.68 V/1.72 V are observed at RT and 200 °C. The inverters also demonstrate small rising edge time of the output signal. The results show great potential for GaN smart power integrated circuit (IC) application.https://www.mdpi.com/2072-666X/12/6/617AlGaN/GaNE-modeD-modep-GaNinvertermonolithic integration |
| spellingShingle | Li-Fang Jia Lian Zhang Jin-Ping Xiao Zhe Cheng De-Feng Lin Yu-Jie Ai Jin-Chao Zhao Yun Zhang E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology Micromachines AlGaN/GaN E-mode D-mode p-GaN inverter monolithic integration |
| title | E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology |
| title_full | E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology |
| title_fullStr | E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology |
| title_full_unstemmed | E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology |
| title_short | E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology |
| title_sort | e d mode gan inverter on a 150 mm si wafer based on p gan gate e mode hemt technology |
| topic | AlGaN/GaN E-mode D-mode p-GaN inverter monolithic integration |
| url | https://www.mdpi.com/2072-666X/12/6/617 |
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