Study of Some Properties of PbI2 Deposited on Porous Silicon Using Thermal Evaporation Technique for Many Applications
The present work is a study of some properties of PbI<sub>2</sub> deposited on porous silicon (n-PSi) by using the thermal evaporation technique. X-ray diffraction, scanning electron microscopy, UV–Vis spectrophotometer, and FTIR analysis were used to characterize the structural, optical...
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| Format: | Article |
| Language: | English |
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University of Technology, Baghdad
2022-09-01
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| Series: | Journal of Applied Sciences and Nanotechnology |
| Subjects: | |
| Online Access: | https://jasn.uotechnology.edu.iq/article_19437_f4c3b1b54ca0e0c568e546618fd12c1c.pdf |
| _version_ | 1811261805587070976 |
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| author | Suha Ali Mohammed Mohammed Fatima Sultan |
| author_facet | Suha Ali Mohammed Mohammed Fatima Sultan |
| author_sort | Suha Ali |
| collection | DOAJ |
| description | The present work is a study of some properties of PbI<sub>2</sub> deposited on porous silicon (n-PSi) by using the thermal evaporation technique. X-ray diffraction, scanning electron microscopy, UV–Vis spectrophotometer, and FTIR analysis were used to characterize the structural, optical, and morphological properties of n-Psi. X-ray diffraction showed that the PbI<sub>2</sub> film has a hexagonal polycrystalline structure, while FE-SEM images showed porous silicone in Photoelectrochemical etching, the pore distribution is irregular and the pore refers to the increased surface area of the silicon. SEM images of pbI<sub>2</sub> film showed that particles were scattered and resembled gravel in size. The estimated optical energy value of thin films of PbI<sub>2</sub> was 2.6 eV. PbI<sub>2</sub> film has lower transmittance values at short wavelengths, but as the wavelength increases, the transmittance values gradually increased. The greatest transmittance value was 0.88. From FTIR analysis, chemical bonds were determined between porous silicon and PbI<sub>2</sub>. |
| first_indexed | 2024-04-12T19:12:30Z |
| format | Article |
| id | doaj.art-62876bc3adfd4e058f926dd4a2510f33 |
| institution | Directory Open Access Journal |
| issn | 2788-6867 |
| language | English |
| last_indexed | 2024-04-12T19:12:30Z |
| publishDate | 2022-09-01 |
| publisher | University of Technology, Baghdad |
| record_format | Article |
| series | Journal of Applied Sciences and Nanotechnology |
| spelling | doaj.art-62876bc3adfd4e058f926dd4a2510f332022-12-22T03:19:51ZengUniversity of Technology, BaghdadJournal of Applied Sciences and Nanotechnology2788-68672022-09-012315716510.53293/jasn.2022.4563.112619437Study of Some Properties of PbI2 Deposited on Porous Silicon Using Thermal Evaporation Technique for Many ApplicationsSuha Ali0Mohammed Mohammed1Fatima Sultan2Department of Applied Sciences, University of Technology – IraqDepartment of Applied Sciences, University of Technology – IraqDepartment of Applied Sciences, University of Technology – IraqThe present work is a study of some properties of PbI<sub>2</sub> deposited on porous silicon (n-PSi) by using the thermal evaporation technique. X-ray diffraction, scanning electron microscopy, UV–Vis spectrophotometer, and FTIR analysis were used to characterize the structural, optical, and morphological properties of n-Psi. X-ray diffraction showed that the PbI<sub>2</sub> film has a hexagonal polycrystalline structure, while FE-SEM images showed porous silicone in Photoelectrochemical etching, the pore distribution is irregular and the pore refers to the increased surface area of the silicon. SEM images of pbI<sub>2</sub> film showed that particles were scattered and resembled gravel in size. The estimated optical energy value of thin films of PbI<sub>2</sub> was 2.6 eV. PbI<sub>2</sub> film has lower transmittance values at short wavelengths, but as the wavelength increases, the transmittance values gradually increased. The greatest transmittance value was 0.88. From FTIR analysis, chemical bonds were determined between porous silicon and PbI<sub>2</sub>.https://jasn.uotechnology.edu.iq/article_19437_f4c3b1b54ca0e0c568e546618fd12c1c.pdflead iodideporous siliconthermal evaporationx-ray diffraction |
| spellingShingle | Suha Ali Mohammed Mohammed Fatima Sultan Study of Some Properties of PbI2 Deposited on Porous Silicon Using Thermal Evaporation Technique for Many Applications Journal of Applied Sciences and Nanotechnology lead iodide porous silicon thermal evaporation x-ray diffraction |
| title | Study of Some Properties of PbI2 Deposited on Porous Silicon Using Thermal Evaporation Technique for Many Applications |
| title_full | Study of Some Properties of PbI2 Deposited on Porous Silicon Using Thermal Evaporation Technique for Many Applications |
| title_fullStr | Study of Some Properties of PbI2 Deposited on Porous Silicon Using Thermal Evaporation Technique for Many Applications |
| title_full_unstemmed | Study of Some Properties of PbI2 Deposited on Porous Silicon Using Thermal Evaporation Technique for Many Applications |
| title_short | Study of Some Properties of PbI2 Deposited on Porous Silicon Using Thermal Evaporation Technique for Many Applications |
| title_sort | study of some properties of pbi2 deposited on porous silicon using thermal evaporation technique for many applications |
| topic | lead iodide porous silicon thermal evaporation x-ray diffraction |
| url | https://jasn.uotechnology.edu.iq/article_19437_f4c3b1b54ca0e0c568e546618fd12c1c.pdf |
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