Study of Some Properties of PbI2 Deposited on Porous Silicon Using Thermal Evaporation Technique for Many Applications
The present work is a study of some properties of PbI<sub>2</sub> deposited on porous silicon (n-PSi) by using the thermal evaporation technique. X-ray diffraction, scanning electron microscopy, UV–Vis spectrophotometer, and FTIR analysis were used to characterize the structural, optical...
Main Authors: | Suha Ali, Mohammed Mohammed, Fatima Sultan |
---|---|
Format: | Article |
Language: | English |
Published: |
University of Technology, Baghdad
2022-09-01
|
Series: | Journal of Applied Sciences and Nanotechnology |
Subjects: | |
Online Access: | https://jasn.uotechnology.edu.iq/article_19437_f4c3b1b54ca0e0c568e546618fd12c1c.pdf |
Similar Items
-
Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors
by: E.R. Manoel, et al.
Published: (1999-04-01) -
Effect of excess PbI2 in fully printable carbon-based perovskite solar cells
by: Kapoor, Vishakha, et al.
Published: (2020) -
Growth of High-Density Zinc Oxide Nanorods on Porous Silicon by Thermal Evaporation
by: Nurul Izni Rusli, et al.
Published: (2012-12-01) -
Co-evaporated perovskite light-emitting transistor operating at room temperature
by: Klein, Maciej, et al.
Published: (2022) -
Synthesis of Porous Silicon by Electrochemical Etching for Gas Sensor Application
by: Duha Jwied, et al.
Published: (2022-04-01)